دیتاشیت BUK7Y35-55B,115
مشخصات دیتاشیت
نام دیتاشیت |
BUK7Y35-55B
|
حجم فایل |
319.6
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
15
|
مشخصات
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
55V
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Current - Continuous Drain (Id) @ 25°C:
28.43A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
35mOhm @ 15A, 10V
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Vgs(th) (Max) @ Id:
4V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
13.1nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
781pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
60W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
LFPAK56, Power-SO8
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Package / Case:
SC-100, SOT-669
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Base Part Number:
BUK7
-
detail:
N-Channel 55V 28.43A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8